2N5551 数据手册
数据手册规格
|
数据手册名称
|
2N5551
|
|
文件大小
|
58.129
千字节
|
|
文件类型
|
pdf
|
|
页数
|
5
|
技术规格
-
RoHS:
true
-
Category:
Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
-
Datasheet:
FUXINSEMI 2N5551
-
Transistor Type:
NPN
-
Operating Temperature:
+150°C@(Tj)
-
Collector Current (Ic):
600mA
-
Power Dissipation (Pd):
625mW
-
Transition Frequency (fT):
100MHz
-
Collector Cut-Off Current (Icbo):
50nA
-
Collector-Emitter Breakdown Voltage (Vceo):
160V
-
Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib):
200mV@50mA,5mA
-
Package:
TO-92-3
-
Manufacturer:
FUXINSEMI
-
DC Current Gain (hFE@Ic,Vce):
80@10mA,5V
